Optimization of Electrical and Optical Properties of Indium Tin Oxide Thin Films Prepared by Magnetron Sputtering

Authors: Muslimin, Darsikin, Marungkil Pasaribu, Nurulhuda Rahman

Volume 8, Issue 4, Paper No. 080402

Abstract

  Indium tin oxide (ITO) is one of the most interesting physical properties to be studied. The ITO material properties depend heavily on deposition techniques and post deposition treatment. The deposition of the ITO thin film was performed by dc sputtering by changing the partial oxygen pressure at the time of deposition and the different annealing temperature to the sample. The X-ray result obtained all the samples having maximal orientation of plane (400). The result of structural analysis obtained by the latice constante (10,17-10,25) Å, and the big grain (109,10-122,81) nm, Latice constante and big grain have changed each sample towards smaller if partial pressure of oxygen and annealing temperature the higher. The electrical resistivity, density, mobility and band gap changes if the partial pressure of oxygen and the annealing temperature are increased. Density (2.77-6.89) x 10²⁰ cm^-3, mobility (19,63-32,98) cm²V^-1s^-1, band gap (3.78-4.30) eV and resistivity (3.67-9.7) x 10^-4 cm^-3, the lowest resistivity was obtained at 3.70% oxygen partial pressure and 250 ^oC annealing temperature. Optical cultures also experienced changes including refractive index (2.09-2.25), constuction damping (2.93-3.49), absorption coefficient (0.036-0.072) and transmittance (81.94%-87.12%). The highest transmittance is obtained at an oxygen partial pressure of 8.90% with an annealing temperature of 250 °C.

Keywords: Oxygen partial pressure; Annealing;  Structure; Elektrical and optical; properties

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